NISHIMURA Akitoshi | Memory Research and Development Center, Texas Instruments Incorporated
スポンサーリンク
概要
関連著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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NISHIMURA Akitoshi
Memory Research and Development Center, Texas Instruments Incorporated
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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TSUKAMOTO Takeyo
Department of Applied Physics, Tokyo University of Science
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OKAMURA Soichiro
Department of Applied Physics, Tokyo University of Science
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Okamura S
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Okamura Soichiro
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Tsukamoto T
Department Of Applied Physics Tokyo University Of Science
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Tsukamoto T
Toshiba Corp. Kawasaki Jpn
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ANDO Shizutoshi
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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NUMATA Ken
Memory Research and Development Center, Texas Instruments Incorporated
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FUJIHASHI Gaku
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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Fujihashi Gaku
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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MURAYAMA Ikuko
Memory Research & Development Center, Texas Instruments, Inc.
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Ando Shizutoshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Murayama Ikuko
Memory Research & Development Center Texas Instruments Inc.
著作論文
- Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO_3 Thin-Film Capacitors
- Characterization of a Sol-Get Derived Pb(Zr, Ti)0_3 Thin-Film Capacitor with Polycrystalline SrRu0_3 Electrodes