Fukuda Y | Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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概要
関連著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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FUKUDA Yukio
ULSI Technology Center, Texas Instruments Japan Limited
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AOKI Katsuhiro
ULSI Technology Center, Texas Instruments Japan Limited
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NISHIMURA Akitoshi
ULSI Technology Center, Texas Instruments Japan Limited
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NUMATA Ken
ULSI Technology Center, Texas Instruments Japan Limited
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Fukuda Yukio
Department Of Physics Faculty Of Science Kyoto University
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KUNITOMO Masakazu
Department of Physics, Faculty of Science, Kobe University
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Kohmoto T
Department Of Physics Faculty Of Science Kobe University
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Kunitomo Masakazu
Department Of Physics Kyoto University
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Fukuda Yukio
Department of Electronic System Engineering, Faculty of System Engineering, Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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KOHMOTO Toshiro
Department of Physics, Faculty of Science, Kobe University
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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Kunitomo M
Department Of Physics Faculty Of Science Kobe University
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Kohmoto Toshiro
Department Of Physics College Of Liberal Arts And Sciences Kyoto University
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Hashimoto M
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Hashimoto M
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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Hashimoto Masao
Department Of Chemistry Faculty Of Science Kobe University
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ETOH Rina
Graduate School of Science and Technology, Kobe University
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Etoh Rina
Graduate School Of Science And Technology Kobe University
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NUMATA Ken
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Memory Research and Development Center, Texas Instruments Incorporated
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NAKAYAMA Kazuyuki
Graduate School of Science and Technology, Kobe University
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Misono Masatoshi
Department Of Chemistry Faculty Of Science Kobe University
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TSUKAMOTO Takeyo
Department of Applied Physics, Tokyo University of Science
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Mitsui T
Crest Japan Science And Technology Agency:japan Atomic Energy Agency
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SAKAGUCHI Isao
National Institute for Materials Science
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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HANEDA Hajime
Sensor Materials Center, National Institute for Materials Science
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OKAMURA Soichiro
Department of Applied Physics, Tokyo University of Science
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Mitsui Toshiharu
Department Of Physics Faculty Of Pharmaceutical Sciences Teikyo University
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Mitsui Toshiharu
Department Of Physics College Of Science Tokyo Institute Of Technology
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Okamura S
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Okamura Soichiro
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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HANEDA Hajime
National Institute for Materials Science
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Yamada Koichi
Department Of Physics Faculty Of Science Kyoto University
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Yamada Koichi
Department Of Agricultural Chemistry The University Of Tokyo
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Takagi Yoshihiro
Institute For Molecular Science:(present Address) Himeji Technical University Faculty Of Science
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Takagi Yoshihiro
Institute For Molecular Scinece
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Aoki Katsuhiro
The Authors Are With Texas Instruments Tsukuba Research & Development Center Ltd.
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Tsukamoto T
Department Of Applied Physics Tokyo University Of Science
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Tsukamoto T
Toshiba Corp. Kawasaki Jpn
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Haneda Hajime
National Institute For Research In Inorganic Materials
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Haneda Hajime
National Institute For Material Science
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Haneda Hajime
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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Hashi Tsuneo
Department Of Physics Faculty Of Science Kyoto University
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Hashi Tsuneo
Department Of Physics Faculity Of Science Kyoto University
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Fukuda Yukio
The Authors Are With Texas Instruments Tsukuba Research & Development Center Ltd.
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ANDO Shizutoshi
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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OKUNO Yasutoshi
Texas Instruments Japan, ULSI Technology Center
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NUMATA Ken
Memory Research and Development Center, Texas Instruments Incorporated
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FUJIHASHI Gaku
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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奥野 泰利
松下電器産業(株)
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Fujihashi Gaku
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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FURUE Shigeki
Graduate School of Science and Technology, Kobe University
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OGAWA Tomoji
Graduate School of Science and Technology, Kobe University
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MISONO Masatoshi
Department of Chemistry, Faculty of Science, Kobe University
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MlTSUI Takahisa
Department of Physics, Keio University School of Medicine
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KOHMOTO Toshio
Department of Physics, Faculty of Science, Kobe University
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HAYASHI Tomoyuki
Graduate School of Science and Technology, Kobe University
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MISONO Masatoshi
Graduate School of Science and Technology,Kobe University
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NUMATA Ken
The authors are with Memory Research & Development Center, Texas Instruments, Inc.
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MURAYAMA Ikuko
Memory Research & Development Center, Texas Instruments, Inc.
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Ando Shizutoshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Hayashi T
Graduate School Of Science And Technology Kobe University
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Murayama Ikuko
Memory Research & Development Center Texas Instruments Inc.
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Ogawa Tomoji
Graduate School Of Science And Technology Kobe University
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Furue Shigeki
Graduate School Of Science And Technology Kobe University
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Mltsui Takahisa
Department Of Physics Keio University School Of Medicine
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Misono Masatoshi
Department Of Applied Physics Fukuoka University
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Fukuda Yukio
Department of Physics,Faculty of Science,Kyoto University
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Hashi Tsuneo
Department of Physics,Faculty of Science,Kyoto University
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
著作論文
- Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
- Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO_3 Thin-Film Capacitors
- Linewidth Reduction of Quantum Beats by Recurrent Excitation(Atomic and Molecular Physics)
- Anomalous Temperature Dependence of Proton Spin-Lattice Relaxation in Tribromoacetamide(TBAA)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Anomalous Temperature Dependence of Proton Spin-Lattice Relaxation in Tribromoacetamide (TBAA)
- Proton NMR Study of Molecular Crystal Ferroelectrics, Trichloroacetamide (TCAA)
- Noise-Color Dependence of Stochastic Resonance Signals in a Hybird Optical Bistable System
- Formation of Reliable Pb(Ti, Zr)O_3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density
- Characterization of a Sol-Get Derived Pb(Zr, Ti)0_3 Thin-Film Capacitor with Polycrystalline SrRu0_3 Electrodes
- Origin of Dielectric Relaxation Observed for Ba_Sr_TiO_3 Thin-Film Capacitor
- Electrode Dependences of Switching Endurance Properties of Lead-Zirconate-Titanate Thin-Film Capacitors
- Temperature Dependence of Dielectric Absorption Current of SrTiO_3 Thin-Film Capacitor
- Electrical Comparison of Sol-Gel Derived Lead-Zirconate-Titanate Capacitors with Ir and Pt Electrodes
- Analysis of the Resistance Degradation of SrTiO_3 and Ba_xSr_TiO_3 Thin Films
- Ferroelectric Properties of Crystalline-Oriented Lead-Zirconate-Titanates Formed by Sol-Gel Deposition Technique
- Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique
- Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of -oriented Lead-Zirconate-Titanate Films by Sol-Get Technique
- Optical Excitation of Zeeman Coherence in Ruby