NUMATA Ken | The authors are with Memory Research & Development Center, Texas Instruments, Inc.

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概要

関連著者

Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
Fukuda Y
Department Of Physics Faculty Of Science Kobe University
Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
Aoki Katsuhiro
The Authors Are With Texas Instruments Tsukuba Research & Development Center Ltd.
Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
Fukuda Yukio
The Authors Are With Texas Instruments Tsukuba Research & Development Center Ltd.
Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
NUMATA Ken
The authors are with Memory Research & Development Center, Texas Instruments, Inc.

著作論文

Formation of Reliable Pb(Ti, Zr)O_3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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