Origin of Dielectric Relaxation Observed for Ba_<0.5>Sr_<0.5>TiO_3 Thin-Film Capacitor
スポンサーリンク
概要
- 論文の詳細を見る
In order to identify the origin of dielectric relaxation of Pt/Ba_<1-x>Sr_xTiO_3/Pt thin-film capacitors, effects of post-annealing in oxygen ambient on their electrical properties were investigated. From comparison of the electrical properties of as-deposited and post-annealed capacitors, it is concluded that electrons from oxygen vacancies in the interfacial depletion region are the origin of the phenomenon.
- 社団法人応用物理学会の論文
- 1996-09-30
著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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FUKUDA Yukio
ULSI Technology Center, Texas Instruments Japan Limited
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NUMATA Ken
ULSI Technology Center, Texas Instruments Japan Limited
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AOKI Katsuhiro
ULSI Technology Center, Texas Instruments Japan Limited
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NISHIMURA Akitoshi
ULSI Technology Center, Texas Instruments Japan Limited
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