NISHIMURA Akitoshi | ULSI Technology Center, Texas Instruments Japan Limited
スポンサーリンク
概要
関連著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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FUKUDA Yukio
ULSI Technology Center, Texas Instruments Japan Limited
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AOKI Katsuhiro
ULSI Technology Center, Texas Instruments Japan Limited
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NISHIMURA Akitoshi
ULSI Technology Center, Texas Instruments Japan Limited
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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NUMATA Ken
ULSI Technology Center, Texas Instruments Japan Limited
著作論文
- Origin of Dielectric Relaxation Observed for Ba_Sr_TiO_3 Thin-Film Capacitor
- Electrode Dependences of Switching Endurance Properties of Lead-Zirconate-Titanate Thin-Film Capacitors
- Temperature Dependence of Dielectric Absorption Current of SrTiO_3 Thin-Film Capacitor
- Electrical Comparison of Sol-Gel Derived Lead-Zirconate-Titanate Capacitors with Ir and Pt Electrodes
- Analysis of the Resistance Degradation of SrTiO_3 and Ba_xSr_TiO_3 Thin Films
- Ferroelectric Properties of Crystalline-Oriented Lead-Zirconate-Titanates Formed by Sol-Gel Deposition Technique
- Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique
- Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of -oriented Lead-Zirconate-Titanate Films by Sol-Get Technique