Analysis of the Resistance Degradation of SrTiO_3 and Ba_xSr_<(1-x)>TiO_3 Thin Films
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概要
- 論文の詳細を見る
For bulk SrTiO_3 (ST), it is known that the leakage current increases abruptly at a certain time under a constant bias (resistance degradation). We investigated the resistance degradation of ST and Ba_xSr_<(1-x)>TiO_3 (BST) thin films because it will be a reliability problem when these thin films are applied to DRAM cell capacitors or on-chip capacitors. The 1000-A^°-thick ST or BST was sputter-deposited in situ on an electron-beam-evaporated Pt bottom electrode. The I-t and I-V characteristics were measured for these films with thermally evaporated Au top electrodes. For positive bias on the top electrode, the films showed resistance degradation similar to that of bulk single-crystal ST. However no degradation was found for negative bias. The I-V characteristics showed that only the electric field enhancement at the bottom interface does not account for this polarity dependence of the resistance degradation. A possible explanation is intrinsic inhomogeneous distribution of oxygen vacancies in the films.
- 社団法人応用物理学会の論文
- 1995-09-30
著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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FUKUDA Yukio
ULSI Technology Center, Texas Instruments Japan Limited
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NUMATA Ken
ULSI Technology Center, Texas Instruments Japan Limited
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AOKI Katsuhiro
ULSI Technology Center, Texas Instruments Japan Limited
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NISHIMURA Akitoshi
ULSI Technology Center, Texas Instruments Japan Limited
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