Electrical Comparison of Sol-Gel Derived Lead-Zirconate-Titanate Capacitors with Ir and Pt Electrodes
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概要
- 論文の詳細を見る
The electrical properties of sol-gel-derived Ir/lead-zirconate-titanate (PZT)/Ir and Pt/PZT/Pt capacitors were carefully investigated. PZTs with columnar structures were well crystallized on both Ir and Pt substrates. 250-nm-thick PZT films deposited on Ir and Pt showed random and <111>-preferred orientations, respectively. The Ir/PZT/Ir capacitor showed large remanent polarization density of 20.7 μC/cm^2 at applied voltage of 2.5 V even though this PZT is randomly oriented. This value is almost equal to that of <111>-oriented film prepared on Pt. Furthermore, coercive field of the Ir/PZT/Ir capacitor is much lower than that of the Pt/PZT/Pt one. For endurance property for switching, Pr of Pt/PZT/Pt capacitor was degraded to 45% of the initial value by switching of 1×10^5 cycles. On the other hand, that of Ir/PZT/Ir capacitor was decreased to 45% by 1×10^7 switching cycles. Degradation of remanent polarization density by switching was reduced considerably by using Ir electrodes.
- 社団法人応用物理学会の論文
- 1995-09-30
著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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FUKUDA Yukio
ULSI Technology Center, Texas Instruments Japan Limited
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NUMATA Ken
ULSI Technology Center, Texas Instruments Japan Limited
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AOKI Katsuhiro
ULSI Technology Center, Texas Instruments Japan Limited
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NISHIMURA Akitoshi
ULSI Technology Center, Texas Instruments Japan Limited
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