Effects of O_2 Gas Pressure in Heat Treatment on Surface Morphology and Electric Properties of Ferroelectric Bi_4Ti_3O_<12> Thin Films with c-Axis Orientation

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Fabrication of ferroelectric Bi_4Ti_3O_<12> thin films was carried out by spin-coating pyrolysis of Bi and Ti naphthenates and successive heat treatment in O_2 gas at various pressures. Heat treatment in O_2 gas at high pressure was effective for the fabrication of c-axis oriented Bi_4Ti_3O_<12> thin films with a smooth surface and improvement of their electric properties. The thin film heat-treated at the O_2 gas pressure of 4.0×10^5 Pa was a single phase of Bi_4Ti_3O_<12> completely oriented along the c-axis with good ferroelectric properties at room temperature: coercive field of 23 kV/cm, remanent polarization of 1.9 μC/cm^2, dielectric constant of 45, loss of 0.01 and leakage current density on the order of 10^<-9> A/cm^2. The remanent polarization of the thin film was kept constant up to the polarization reversal at 1×10^7 cycles.
社団法人応用物理学会の論文
1995-09-30