Estimation of Parasitic Capacitance in Measurement of Hysteresis Properties of Ferroelectric Microcapacitors Using Scanning Probe Microscope

概要

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Parasitic capacitances in the measurement of the hysteresis properties of ferroelectric microcapacitors are estimated. A scanning probe microscope with a conductive cantilever was used for contacting various-sized Pb(Zr,Ti)O3 (PZT) microcapacitors fabricated by electron-beam-induced patterning. A parasitic capacitance under the condition in which the cantilever was lifted up by 40 μm from the contact point was estimated to be 0.88 pF. Although all the PZT microcapacitors showed well-saturated hysteresis curves with compensation for the parasitic capacitance of 0.88 pF, the slopes of the compensated hysteresis curves around the maximum field increased with decreasing capacitor area. From the capacitor area dependence of the slopes, the increase in parasitic capacitance caused by bringing the cantilever near substrates for contact was estimated to be 0.049 pF. This increased parasitic capacitance evidently decreased the apparent coercive fields of the PZT microcapacitors with areas lower than 10 μm2 while it had no influence on remanent polarization.
2005-11-15