Improvement in Step Coverage of Pb(Zr,Ti)O3 Thin Films Deposited by Liquid Delivery Metalorganic Chemical Vapor Deposition

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概要

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• Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were deposited on trenched SiO2/Si substrates at various substrate temperatures by liquid delivery metalorganic chemical vapor deposition (MOCVD) using Pb(DPM)2, Zr(DIBM)4 and Ti(O$i$Pr)2(DPM)2 as precursors. Their step coverage increased from 38 to 80%, while their deposition rate decreased with decreasing the substrate temperature from 600 to 400°C. In the deposition on planar Pt/Ti/SiO2/Si substrates, the as-grown PZT films deposited under the substrate temperature of 450°C were confirmed to be amorphous; they crystallized into perovskite PZT single phase and showed ferroelectric properties after post annealing at 600°C in air for 15 min. From these results, we concluded that the combination of low-temperature deposition and post annealing is effective in improving the step coverage of PZT thin films deposited by liquid delivery MOCVD although composition control is severe in such a case because the self-regulation of lead atoms is not realized at low temperatures.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Okamura Soichiro

  Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)

• Shiosaki Tadashi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Otani Yohei

  Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)

• Abe Norikazu

  Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)

• Miyake Masato

  Graduate School Of Agricultural Science Tohoku University

• Shiosaki Tadashi

  Graduate School of Material Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan

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