Dependence of Microwave Properties of BaxSr1-xTiO3 Thin Films on Substrate
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概要
- 論文の詳細を見る
BaxSr1-xTiO3 ($x=0.5$) (BST) films were deposited on MgO, c-cut sapphire, r-cut sapphire and Si substrates by rf sputtering. A coplanar waveguide line was fabricated as a transmission line for microwave signals. Both the phase shift and loss tangent of the samples were measured using the on-wafer through-reflect-line (TRL) calibration comparison method. An external bias of 200 V was applied to the coplanar waveguide line fabricated on the BST layer. The phase of the line changes according to the dependence of BST permittivity on bias. The phase of the line was found to vary according to the crystalline quality of the films. The films were epitaxially grown on the MgO and c-cut sapphire substrates. The phase shifts of the samples were 58.4°, 4.4°, 1.5° and 0.7° for samples with films grown on Si, MgO, c-cut sapphire and r-cut sapphire, respectively. The dielectric loss tangents were 0.008, 0.016 and 0.026 for the films grown on MgO, r-cut sapphire and c-cut sapphire, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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NISHIDA Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology
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Shiosaki Tadashi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Bhakdisongkhram Gun
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Yamashita Youji
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Nishida Takashi
Graduate School of Material Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Shiosaki Tadashi
Graduate School of Material Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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