Fatigue Behaviour of Pb(Zr,Ti)O3/PbZrO3 Multilayer Ferroelectric Thin Films

概要

論文の詳細を見る
Fatigue behaviour of Pb(Zr0.45Ti0.55)O3 (PZT) thin films on Pt(111)/Ti/SiO2/Si(100) substrates with PbZrO3 (PZ) buffer layers were investigated. Two different buffer layer configurations were studied: bottom- and top-only buffer layers. The PZ buffer layers were obtained by RF magnetron sputtering of a loose powder target containing a mixture of PbZrO3 and ZrO2 powders. The PZT thin films were prepared by sol–gel spin coating method. All of the films had well-crystallized, uniform and dense microstructure with full (111) orientation. The bottom buffer layers influenced the nucleation and grain growth of the upper PZT layers creating a bimodal grain size distribution. Secondary ion mass spectrometry (SIMS) elemental depth profiles indicated that a PZ buffer layer led to well-defined and sharp composition profiles. The $P$–$E$ hysteresis measurements indicated comparable remnant polarization values ($2P_{\text{r}}=40--50$ μC/cm2) and coercive field levels ($2E_{\text{c}}=150--180$ kV/cm) with un-buffered film. The fatigue endurance of PZT thin films with PZ buffer layers was superior than the un-buffered counterpart. A fatigue-free behaviour was observed up to $10^{9}$ switching cycles.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-09-30