Fabrication of Ferroelectric Pb(Zr,Ti)O3 Thin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition Using a Novel Titanium Source Ti(OEt)2(DPM)2

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Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were fabricated on platinized silicon substrates by liquid delivery metalorganic chemical vapor deposition (MOCVD) using Pb(DPM)2, Zr(DIBM)4 and Ti(OEt)2(DPM)2, and subsequent post annealing. Approximately 30% higher deposition rates were attained and the variation in the composition of the deposited films with changing substrate temperature was significantly suppressed using Ti(OEt)2(DPM)2 instead of Ti(O$i$Pr)2(DPM)2. Although the films deposited at 400 and 450 °C were amorphous with PbPtx alloy as a secondary phase, they were crystallized into a perovskite PZT single phase with preferential 111 and 001/100 mixed orientations, respectively, by post annealing at 600 °C in air for 15 min. The 111-oriented PZT film with a thickness of 153 nm showed well-saturated and symmetric hysteresis properties with a twofold remanent polarization of 64.4 μC/cm2 and a twofold coercive field of 133.6 kV/cm. These results suggest that Ti(OEt)2(DPM)2 is a more suitable source than Ti(O$i$Pr)2(DPM)2 for liquid delivery MOCVD of PZT thin films.
2006-03-15