Annealing Temperature Dependences of Ferroelectric and Magnetic Properties in Polycrystalline Co-Substituted BiFeO3 Films

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概要

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• Multiferroic Co-substituted BiFeO3 films were fabricated by chemical solution deposition method followed by post deposition annealing at various temperatures. The substitution of cobalt of $B$-sites for iron in BiFeO3 was promoted at relatively high temperatures. The $B$-site substitution by cobalt promoted increases in saturation magnetization and spontaneous magnetization. By substitution, leakage current density was suppressed in a high-electric-field region, and ferroelectric hysteresis ($P$–$E$) loops became measurable even at room temperature. The optimal annealing temperature for the coexistence of a high remanent polarization and a high remanent magnetization was 923 K having a high $B$-site substitution ratio of cobalt.

• 2008-09-25

著者

• Yasui Shintaro

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• Ando Yasuo

  Department Of Applied Physics Graduate School Of Engineering Tohoku University

• Funakubo Hiroshi

  Department Of Innovative And Engineered Materials

• Azuma Masaki

  Institute For Chemical Research Kyoto University

• Hiratsuka Nobuyuki

  Department Of Electronic Engineering Saitama University

• Okamura Soichiro

  Department Of Applied Physics Faculty Of Science Science University Of Tokyo

• Nishida Ken

  Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology

• SHIMA Hiromi

  Department of Applied Physics, Faculty of Science, Tokyo University of Science

• Miura Jun

  Department Of Clinical Pharmacology Hirosaki University Graduate School Of Medicine

• Naganuma Hiroshi

  Department Of Applied Physics Faculty Of Science Tokyo University Of Science

• Iijima Takashi

  Research Center For Hydrogen Industrial Use And Storage National Institute Of Advanced Industrial Sc

• Shima Hiromi

  Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

• Kakizaki Koichi

  Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan

• Ando Yasuo

  Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Nakajima Mitsumasa

  Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

• Kamishima Kenji

  Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan

• Miura Jun

  Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

• Nishida Ken

  Department of Communicating Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan

• Nishida Ken

  Department of Communications Engineering, National Defense Academy of Japan, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan

• Funakubo Hiroshi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-43 Nagatuta-cho, Midori-ku, Yokohama 226-8502, Japan

• Yasui Shintaro

  Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan

• Funakubo Hiroshi

  Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Iijima Takashi

  Research Center for Hydrogen Industrial Use and Storage, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

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