A Simple Fabrication Process using Focused Ion Beam for Deep Submicron Magnetic Tunnel Junctions
スポンサーリンク
概要
- 論文の詳細を見る
Focused ion beam (FIB) induced tungsten deposition technique was applied to fabrication of small (few-hundred-nanometer scale) magnetic tunnel junctions (MTJs). The deposited tungsten pattern was used as an etching mask and a metal connection between an MTJ and a lead line. This fabrication method can eliminate some difficult process steps so that deep submicron-sized MTJs can be fabricated easily and reproducibly. This technique is useful to evaluate basic properties of small MTJs for spin-electronics devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-11-15
著者
-
KUBOTA Hitoshi
Department of Applied Physics, Graduate School of Engineering, Tohoku University
-
Ando Yasuo
Department Of Applied Physics Graduate School Of Engineering Tohoku University
-
Miyazaki Terunobu
Department Of Applied Physics Faculty Of Engineering Tohoku University
-
Ando Yasuo
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
-
Watanabe Daisuke
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
-
Miyazaki Terunobu
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
関連論文
- Direct Observation of Atomic Ordering and Interface Structure in Co_2MnSi/MgO/Co_2MnSi Magnetic Tunnel Junctions by High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy
- Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction
- Effect of steam explosion pretreatment on treatment with Pleurotus ostreatus for the enzymatic hydrolysis of rice straw(ENVIRONMENTAL BIOTECHNOLOGY)
- Gilbert Damping for Various Ni_Fe_ Thin Films Investigated Using All-Optical Pump-Probe Detection and Ferromagnetic Resonance
- Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions Using a Co_2MnSi(110) Electrode
- Tunneling Spin Polarization and Magnetic Properties of Co-Fe-B Alloys and Their Dependence on Boron Content
- Anisotropic Intrinsic Damping Constant of Epitaxial Co_2MnSi Heusler Alloy Films
- Temperature Dependence of Tunnel Magnetoresistance in Co-Mn-Al/Al-Oxide/Co-Fe Junctions
- A Simple Fabrication Process using Focused Ion Beam for Deep Submicron Magnetic Tunnel Junctions
- Spin-Dependent Inelastic Electron Tunneling Spectroscopy of Magnetic Tunnel Junctions