Electrochemical Etching of Ru Film for Bevel Cleaning of Back End of Line
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概要
- 論文の詳細を見る
We have developed a new wet technology using electrochemical etching to remove ruthenium (Ru) film on the wafer bevels for back end of line (BEOL) processes of system LSIs. Ru films cannot be etched using conventional acidic solutions. However, an etching rate of 50 nm/min for Ru film is achieved using a diluted HCl solution of 0.5%. This technology is a stable, low cost and environmentally friendly process without conventional special and concentrated solutions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Kimura Chiharu
Department Of Electrical Engineering Osaka University
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Watanabe Daisuke
Department Of Dermatology Aichi Medical University
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Aoki Hidemitsu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Department of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Ooi Naoki
Department of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Jong-Hyeon Jeong
Department of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Jong-Hyeon Jeong
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Sugino Takashi
Department of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Ooi Naoki
Department of Electrical Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Watanabe Daisuke
Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aoba-ku, Sendai 980-8579, Japan
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