Improvement of Dark Current Density of AlInAs/InGaAs Metal-Semiconductor-Metal Photodetector Using Phosphine-Plasma-Treated Schottky Barrier
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概要
- 論文の詳細を見る
AlInAs/InGaAs metal-semiconductor-metal (MSM) photodetectors with a low dark current density are fabricated using a surface modification process with phosphine (PH_3) plasma. Phosphidazation of the AlInAs cap layer reduces the surface state density and allows formation of high Schottky barrier with a tunnel metal-insulator-semiconductor (MIS) structure. A dark current density as low as 0.021 pA/μm^2 at 10 V is obtained.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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Sugino Takashi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Hirata Daiji
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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