Effects of Hydrogen Dilution of Silane on Properties of Glow-Discharged Undoped Hydrogenated Silicon
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概要
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The electrical and photoelectronic properties of glow-discharged hydrogenated silicon films were measured as a function of the hydrogen-dilution ratio of silane. At low silane fractions SiH_4/ (SiH_4+H_2) below 10%, the formation of the so-called microcrystalline state was confirmed by X-ray diffraction analysis. However, the electron mobility measured by the time-to-flight method showed no drastic change after microcrystalline formation. The temperature dependence of the steady-state photoconductivity is quite different for samples in the amorphous (silane fraction > 10%) and microcrystalline (silane fraction < 10%) states, reflecting a difference in the recombination process. However, as far as the room-temperature photoconductivity is concerned, no great change is observed among samples deposited at different dilution ratios.
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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Kuwagaki Mamoru
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kuwagaki Mamoru
Department Of Electrical Engineering Faculty Of Engineering Osaka University:(present Address) Atsug
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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NAGATA Shunsuke
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Nagata Shunsuke
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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