Hole Transport in Glow-Discharged a-Si:H Films Compensated with Boron
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概要
- 論文の詳細を見る
In lightly boron-doped a-Si: H films electrons become highly dispersive in time-of-flight measurement while holes clearly show a non-dispersive transport, in drastic contrast with observations in undoped or lightly phosphorus-doped films. Mechanisms responsible for the drastic change in the electronic transport characteristic between undoped or phosphorus-doped slightly n-type and lightly boron-doped films are briefly discussed.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Shirakawa K
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shirakawa Kazuhiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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