Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
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概要
- 論文の詳細を見る
Surface treatment of n-InP by phosphine (PH_3) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH_3 plasma treatment, while the surface Fermi level is located around 0.4 eV below the conduction band edge for a surface wet-etched before PH_3 plasma treatment. A funneling metal-insulator-semiconductor (MIS) Schottky structure is formed on PH_3-plasma-treated InP to evaluate the treated surface. The Schottky barrier height evaluated from the Richardson plot is found to depend strongly on the metal work function. This suggests that the surface state density pinning the surface Fermi level is profoundly reduced due to PH_3 plasma treatment.
- 社団法人応用物理学会の論文
- 1993-09-01
著者
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Sugino T
Osaka Univ. Osaka Jpn
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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SUGINO Takashi
Department of Electrical Engineering, Osaka University
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SAKAMOTO Yoshifumi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Sakamoto Y
Department Of Applied Chemistry Tokyo Metropolitan University
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Sugino T
Department Of Electrical Engineering. Osaha University
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SUMIGUCHI Tatsuo
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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NOMOTO Kuninori
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Shirafuji J
Fukui Univ. Technol.
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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Nomoto Kuninori
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Sumiguchi Tatsuo
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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