Schottky Barrier Height of Phosphidized InGaAs
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概要
- 論文の詳細を見る
The Schottky barrier height of phosphidized InGaAs has been studied. The surface of InGaAs (In 53%) lattice-matched to InP is treated with gentle phosphine plasma. Schottky junctions are then formed on phosphidized InGaAs by evaporating various metals such as Au, Cu, Ti and Ag. True barrier heights estimated from the Richardson plot are found to be significantly dependent on the metal work function. Phosphidization forms a thin phosphorus layer in addition to substitution of phosphorus for arsenic, resulting in formation of metal-insulator semiconductor (MIS) Schottky junctions. An effective barrier height as high as 0.7 eV is attained for Au/InGaAs MIS Schottky junctions as measured from the room temperature current-voltage characteristic, while the true barrier height of 0.55 eV, which is close to the Schottky limit, is estimated from the Richardson plot.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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Sugino T
Osaka Univ. Osaka Jpn
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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SUGINO Takashi
Department of Electrical Engineering, Osaka University
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SAKAMOTO Yoshifumi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Sakamoto Y
Department Of Applied Chemistry Tokyo Metropolitan University
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Sugino T
Department Of Electrical Engineering. Osaha University
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Shirafuji J
Fukui Univ. Technol.
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Sugino Takashi
Department Of Basic Pathology Fukushima Medical University
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