Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
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概要
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The velocity-field characteristic in vapour-grown n-GaAs has been measured between 300 K and 4.2 K by using a microwave heating technique. The threshold field decreases with decreasing temperature on the contrary to the results by Ruch and Kino; this behaviour is in good agreement with the theory by Ruch and Fawcett. The negative differential mobility behaves in a similar way to the low field mobility between 300 K and 4.2 K. At temperatures below about 60 K, the electron mobility at fields up to 1 kV/cm becomes larger in magnitude than the low-field value because of decrease in ionized impurity scattering in hot electron region. The velocity-field relation up to 1 kV/cm is well explained in terms of polar optical phonon and ionized impurity scattering.
- 社団法人日本物理学会の論文
- 1972-04-05
著者
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cornell University
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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NAKADE Yoshiharu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Nakade Yoshiharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering Osaka University
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