Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Yoh Kanji
Department Of Electrical Engineering Osaka Institute Of Technology
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Yoh K
Hokkaido Univ. Sapporo Jpn
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Inoue M
Setsunan Univ. Osaka Jpn
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TANIGUCHI Hiroaki
Department of Energy Sciences, Tokyo Institute of Technology
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Kyoto Univ. Kyoto Jpn
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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KIYOMI Kazumasa
Department of Electrical Engineering, Osaka Institute of Technology
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Taniguchi Hiroaki
Department Of Electrical Engineering Osaka Institute Of Technology
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Kiyomi Kazumasa
Department Of Electrical Engineering Osaka Institute Of Technology
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Yoh K
Research Center For Interface Quantum Electronics Hokkaido University
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