Characteristics of Self-Assembled InSb Dots Grown on (100) AlGaSb by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-01
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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KOIKE Kazuto
New Materials Research Center, Osaka Institute of Technology
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SASA Shigehiko
New Materials Research Center, Osaka Institute of Technology
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INOUE Masataka
New Materials Research Center, Osaka Institute of Technology
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YANO Mitsuaki
New Materials Research Center, Osaka Institute of Technology
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SAEKI Yoshitaka
New Materials Research Center, Osaka Institute of Technology
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OHKAWA Hiroyuki
New Materials Research Center, Osaka Institute of Technology
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