Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al_<0.5>Ga_<0.5>As Barriers
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概要
- 論文の詳細を見る
Self-assembling molecular beam epitaxial growth of the InAs quantum dots (QDs) on Al_<0.5>Ga_<0.5>As was studied. In contrast to the InAs QDs grown on GaAs, the growth on Al_<0.5>Ga_<0.5>As was found to be difficult for the development of equishaped islands with strong exciton confinement at high temperatures. This difficulty was due to the adsorption of excess As molecules and impurity atoms on the Al_<0.5>Ga_<0.5>As surface from the growth background. By inserting 2.0 monolayers (ML) of GaAs between the InAs and the Al_<0.5>Ga_<0.5>As, however, narrowing of the size distribution and enhancement of the exciton confinement was obtained. Intense photoluminescence continuing to room temperature was achieved by applying this growth technique for the 2.4 ML InAs QDs in Al_<0.5>Ga_<0.5>As barrier.
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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YANO Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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YANO Mitsuaki
New Materials Research Center, Osaka Institute of Technology
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OHKAWA Hiroyuki
New Materials Research Center, Osaka Institute of Technology
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Yano M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Yano Mitsuaki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Koike Kazuto
New Materials Research Center Osaka Institute Of Technology
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