Ion-Sensitive Characteristics of an Electrolyte-Solution-Gate ZnO/ZnMgO Heterojunction Field-Effect Transistor as a Biosensing Transducer
スポンサーリンク
概要
- 論文の詳細を見る
Characteristics of an ion-sensitive ZnO/ZnMgO heterojunction field-effect transistor (HFET) with an amine-modified single-crystalline O-polar ZnMgO gate electrode are discussed to develop the application to biosensing transducers. The ion-sensitivity was based on the proton transfer to/from the amino groups on the gate electrode, the amine-modification of which was performed using a silanization technique by immersing the HFET into an aminosilane based solution. Stable operation in electrolyte solution in accordance with the standard FET theory with small hysteresis and small leakage current was confirmed, and the amperometric operation revealed a high pH sensitivity of $-20$ μA/pH with a reproducible result. A potential application of the ion-sensitive HFET to amperometric biosensing transducers was also demonstrated by immobilizing enzyme molecules of glucose oxidase on the amine-modified gate electrode.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
-
Ogata Ken-ichi
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
YANO Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
-
Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
Koike Kazuto
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
Sasa Shigehiko
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Kawasaki Motoki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku, Osaka 535-8585, Japan
-
Inoue Tomoyuki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
-
Hashimoto Takahito
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Takagi Daisuke
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Ogata Ken-ichi
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Inoue Tomoyuki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Yano Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Koike Kazuto
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Inoue Masataka
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
-
Kawasaki Motoki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
関連論文
- Analysis of Acoustic Streaming in Nematic Liquid-Crystal Cell
- Optical Properties of Domain Pattern Induced in Nematic Liquid-Crystal Cell by Elastic Wave Propagation : Optical Properties of Condensed Matter
- Propagation Characteristics of Lamb Wave in Nematic Liquid-Crystal Cell
- Influence of Liquid-Crystal Directors in an Electric Field on Elastic Wave Propagating in Liquid-Crystal Cell
- Viscosity Measurement of Nematic Liquid Crystal Using Shear Horizontal Wave Propagation in Liquid Crystal Cell
- Viscosity Measurement of Ferroelectric Liquid Crystal Using Shear Horizontal Wave Propagation in a Trilayer Structure
- Periodic Property of Domain in Nematic Liquid Crystal Induced by Elastic Wave
- Liquid Viscosity Measurement Using Plate Mode Shear Horizontal Waves on a Piezoelectric Ceramic Thin Plate
- Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
- Fabrication of InAs Single-Crystal Free-Standing Wires for the Study of Electron and Thermal Transport
- Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching
- Monte Carlo Simulation for Auger Depth Profiling of GaAs/AlAs Superlattice Structure by Ar^+ Ion Sputtering
- Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O^+_2 and Ar^+ Ion Sputtering
- Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn_Mg_O Heterointerface
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- A New Concept of Isotope Separation Using Ion Cyclotron Resonance in a Magnetic Field Having a Radial Component
- Beam-Profile Control Using an Octupole Magnet
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Model Test of Biperiodic L-support Disk-and-Washer Linac Structure
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Phase-Sensitive Optical Probe for Surface Acoustic Wave Soliton Investigation
- Experimental Studies on Nonlinear Dispersive Surface Acoustic Waves for Solitons
- Reconstruction of Three-Dimensional Images of Surface Acoustic Waves by Means of Computer-Controlled Laser Probe
- Interface-Treated Josephson Junctions in Trilayer Structures
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
- Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- CF and CF_2 Radical Densities in 13.56-MHz CHF_3/Ar Inductively Coupled Plasma(Nuclear Science, Plasmas, and Electric Discharges)
- Planarization of the Yba_2Cu_3O_ Base Electrodes in Trilayer Josephson Junctions : Superconductors
- Analysis of Overlay Accuracy in 0.14μm Device Fabrication using Synchrotron Radiation Lithography
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Surface Structure of Zr-O/W(100) System at 1700 K
- Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing
- Evaluation of Acid Diffusibility in a Chemical Amplification Resist Using Acidic Water-Soluble Film
- Work Function Change Measured by Electron Beam Chopping Technique as Applied to Oxygen-Adsorbed W(100) at High Temperature
- Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formatiorn
- Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
- Explosion Hazard of Gaseous Ozone
- Ozone Passivation Technique for Corrosive Gas Distribution System
- Spin-Polarized Scanning Electron Microscope Equipped with a Thumb-Size Spin Detector : Techniques, Instrumentations and Measurement
- Spin-Polarized Scanning Electron Microscope for Analysis of Complicated Magnetic Domain Structures
- High Spatial Resolution Spin-Polarized Scanning Electron Microscope
- Spin-Polarized Scanning Electron Microscopy
- Spin-Polarized Scanning Electron Microscope for Magnetic Domain Observation
- Evaluation of Device Charging in Ion Implantation : Ion Beam Process
- Observation of Magnetic Stripe Domains in Ni-Fe Films Using Spin-Polarized Scanning Electron Microscopy
- Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- A Study on the Potential Structure of the Barrier in Ba_K_xBiO_3/Natural-Barrier/Au Structures
- Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
- Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
- Electron Beam Induced Damage of MOS Gate Oxide
- Electron Beam Induced Damage of MOS Gate Oxide
- Control of the Surface Charge and Improved Corrosion Resistance of Stainless Steel by the Combined Use of Gaseous Ozone and Heat (特集/エネルギーと表面技術)
- Comparison of the Efficacies of Gaseous Ozone and Sodium Hypochlorite in Cleaning Stainless Steel Particles Fouled with Proteins
- Molecular Beam Epitaxial Growth and Characterization of the Vertically Aligned InAs Quantum Dots Embedded in Al_Ga_As
- Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al_Ga_As Barriers
- Actively Mode-Locked and Q-Switched Phosphate Glass Oscillator
- Actively Mode-Locked and Q-Switched YAG Laser with Precise Synchronizability
- Absorbed-Current Polarization Detector with Fe(110) Target
- Molecular Beam Epitaxy of In_xGa_Sb (0≦x≦1)
- Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor
- Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors
- Ion-Sensitive Characteristics of an Electrolyte-Solution-Gate ZnO/ZnMgO Heterojunction Field-Effect Transistor as a Biosensing Transducer
- Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates
- Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates (Special Issue : Microprocesses and Nanotechnology)
- Characteristics of MoO