Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
スポンサーリンク
概要
- 論文の詳細を見る
Heterostructure (GaAs/AlGaAs) Hall-bar devices with a short cross gate arestudied in a quantum Hall regime. Anomalous longitudinal resistances and deviationsof the Hall resistance from an expected quantized value are quantitatively analyzed interms of properties of contacts. Reverse-field reciprocity symmetry is observed todemonstrate symmetric properties of contacts.Iquantum flail effects, edge states, contacts, nonequilibrium distribution, ll reciprocity symmetryl
- 社団法人日本物理学会の論文
- 1989-11-15
著者
-
Hirai Hiroshi
Department Of Gerontology Kanazawa Medical University
-
KOMIYAMA Susumu
Department of Basic Science, University of Tokyo
-
Hirai H
Univ. Tokyo Tokyo Jpn
-
Sasa S
Fujitsu Laboratories Ltd.
-
Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
SASA Shigehiko
Semiconductor Materials Laboratory,Fujitsu Laboratories,Ltd.
-
FUJII Toshio
Semiconductor Materials Laboratory,Fujitsu Laboratories,Ltd.
-
Komiyama S
Univ. Tokyo Tokyo Jpn
-
Komiyama Susumu
Department Of Basic Science University Of Tokyo
-
Fujii Toshio
Semiconductor Materials Laboratory Fujitsu Laboratories Ltd.
関連論文
- ON REGRESSION OF ATHEROSCLEROSIS BY LEUKOCYTES : Coagulation, Arteriosclerosis : PROCEEDINGS OF THE 44th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRCULATION SOCIETY
- Single Far-Infrared Photon Detection Using an SET
- Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn_Mg_O Heterointerface
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- System-Size Dependence of Quantum Hall Transitions(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
- Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- ^Ga COMPUTER SCINTIGRAPHY TO DIAGNOSIS OF EXTENSION OF CERVICAL CARCINOMA
- Continuous Wavelength Tuning of Inter-Valence-Band Laser Oscillation in p-Type Germanium Over Range of 80-120 μm
- High T_c Magnetic Superconductor : Ho-Ba-Cu Oxide
- Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- CHANGE OF PLASMA VISCOSITY IN ACUTE MYOCARDIAL INFARCTION AND ANGINA PECTORIS : Ischemic Heart disease : Ist Auditorium : Proceedings of the 43rd Annual Meeting of the Japanese Circulation Society, Tokyo, 1979
- COMPARATIVE STUDIES ON SPIRONOLACTONE AND TRICHLORMETHIAZIDE IN THE TREATMENT OF THE ELDERLY HYPERTENSION : IInd Auditorium
- STUDIES ON THE HYPOKALEMIA OF THE AGED
- Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
- Far-Infrared Laser Oscillation in p-Ge Using External Reflectors
- Local Current Distribution in the Presence of Nonequilibrium Distribution of Edge States
- Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10--50 μm
- Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor
- Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors
- Ion-Sensitive Characteristics of an Electrolyte-Solution-Gate ZnO/ZnMgO Heterojunction Field-Effect Transistor as a Biosensing Transducer
- Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates
- Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates (Special Issue : Microprocesses and Nanotechnology)
- Ultrasensitive Far-Infrared Phototransistors Fabricated in Superlattice Structures
- Binary diffusion coefficients of carbon disulfide in gases.