Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor

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概要

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• The characteristics of an enzyme-based ZnO/Zn0.7Mg0.3O heterojunction field-effect transistor (HFET) for glucose sensing are reported. The enzyme glucose oxidase (GOD) was immobilized on an amine-modified gate electrode of the ZnO/Zn0.7Mg0.3O HFET, and glucose sensing was performed by detecting biocatalytically yielded protons using an ion-sensitive function of the gate electrode. The chemical bonding states of the amine-modified and GOD-immobilized surfaces were analyzed by X-ray photoemission spectroscopy, and the enzyme activity of GOD was examined by a colorimetric method. In agreement with the promising results of these experiments, this enzyme-based HFET exhibited stable sensing performance with a linear response in a wide range of glucose concentrations from 0 to 4 mg$\cdot$cm-3 and at a short time constant less than 20 s.

• 2009-04-25

著者

• Ogata Ken-ichi

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Inoue Masataka

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• YANO Mitsuaki

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• Hashimoto Mitsuhiro

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Koike Kazuto

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

• Takagi Daisuke

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

• Hashimoto Takahito

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

• Inoue Tomoyuki

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

• Hashimoto Takahito

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan

• Takagi Daisuke

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan

• Inoue Tomoyuki

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan

• Yano Mitsuaki

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

• Koike Kazuto

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

• Inoue Masataka

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan

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