Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-08-25

著者

• Inoue M

  Department Of Electrical Engineering Osaka Prefectural Technical College

• Inoue M

  Osaka Inst. Technol. Osaka Jpn

• Inoue M

  Setsunan Univ. Osaka Jpn

• Inoue Masami

  Association Of Super-advanced Electronics Technologies (aset)

• Inoue M

  Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn

• Inoue M

  Kagoshima Univ. Kagoshima Jpn

• Inoue M

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Inoue M

  Kyoto Univ. Kyoto Jpn

• Ogata Ken-ichi

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Inoue Masataka

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Inoue M

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Sasa S

  Fujitsu Laboratories Ltd.

• KOIKE Kazuto

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• HASHIMOTO Mitsuhiro

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• TSUJI Kumiho

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• SEIWA Yasuaki

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• SASA Shigehiko

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• YANO Mitsuaki

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

• Hashimoto Mitsuhiro

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Yano M

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Tsuji Kumiho

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Seiwa Yasuaki

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Koike Kazuto

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

関連論文

• Preparation of Y-Ba-Cu-O Thin Films by the CVD Method in a Vacuum-Evaporation-Type Reactor
• New Drive Line Shape for Reflective Magnetooptic Spatial Light Modulator
• Magnetooptic Spatial Light Modulator for Volumetric Digital Recording System
• Magneto-optic spatial light modulator based on magneto-photonic crystal
• One-Dimensional Magnetophotonic Crystal Spatial Light Modulator
• Analysis of Acoustic Streaming in Nematic Liquid-Crystal Cell
• Optical Properties of Domain Pattern Induced in Nematic Liquid-Crystal Cell by Elastic Wave Propagation : Optical Properties of Condensed Matter
• Propagation Characteristics of Lamb Wave in Nematic Liquid-Crystal Cell
• Influence of Liquid-Crystal Directors in an Electric Field on Elastic Wave Propagating in Liquid-Crystal Cell
• Viscosity Measurement of Nematic Liquid Crystal Using Shear Horizontal Wave Propagation in Liquid Crystal Cell
• Viscosity Measurement of Ferroelectric Liquid Crystal Using Shear Horizontal Wave Propagation in a Trilayer Structure
• Periodic Property of Domain in Nematic Liquid Crystal Induced by Elastic Wave
• Liquid Viscosity Measurement Using Plate Mode Shear Horizontal Waves on a Piezoelectric Ceramic Thin Plate
• Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
• Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
• Fabrication of InAs Single-Crystal Free-Standing Wires for the Study of Electron and Thermal Transport
• Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching
• Monte Carlo Simulation for Auger Depth Profiling of GaAs/AlAs Superlattice Structure by Ar^+ Ion Sputtering
• Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O^+_2 and Ar^+ Ion Sputtering
• Molecular Beam Epitaxial Growth of Al-doped ZnMgO Alloy Films for Modulation-doped ZnO/ZnMgO Heterostructures
• Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn_Mg_O Heterointerface
• Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
• Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
• A New Concept of Isotope Separation Using Ion Cyclotron Resonance in a Magnetic Field Having a Radial Component
• Beam-Profile Control Using an Octupole Magnet
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Diminution of Micro-Eddy-Current Losses in Magneto-Surface-Acoustic-Wave Propagation Utilizing Multilayered Magnetostrictive Film Separated by Insulating Layers : SAW and Communication Devices
• BGS-type Magneto-Surface-Acoustic-Wave Devices Utilizing Horizontally Polarized PZT-Substrates : SAW and Communication Devices
• Effect of Eddy Current Loss on the Propagation Properties of Magneto-Surface-Acoustic-Waves in Highly Magnetostrictive Alloy Film Deposited on Glass Substrate : SAW and Communication Devices
• Magnetoelastic Wave Excitation Properties of Amorphous Iron-Boron Films Prepared by RF-High Rate Sputtering
• Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
• Model Test of Biperiodic L-support Disk-and-Washer Linac Structure
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
• Phase-Sensitive Optical Probe for Surface Acoustic Wave Soliton Investigation
• Experimental Studies on Nonlinear Dispersive Surface Acoustic Waves for Solitons
• Reconstruction of Three-Dimensional Images of Surface Acoustic Waves by Means of Computer-Controlled Laser Probe
• Interface-Treated Josephson Junctions in Trilayer Structures
• Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
• Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
• Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
• Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates
• Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
• CF and CF_2 Radical Densities in 13.56-MHz CHF_3/Ar Inductively Coupled Plasma(Nuclear Science, Plasmas, and Electric Discharges)
• Planarization of the Yba_2Cu_3O_ Base Electrodes in Trilayer Josephson Junctions : Superconductors
• Lamb Wave Propagation Characteristics and Transducer Performances in Layered Substrate Composed of Piezoelectric Thin Plate and Glass Thin Plate
• Characteristics of Self-Assembled InSb Dots Grown on (100) AlGaSb by Molecular Beam Epitaxy
• Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma
• Analysis of Overlay Accuracy in 0.14μm Device Fabrication using Synchrotron Radiation Lithography
• Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
• Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
• Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
• Surface Structure of Zr-O/W(100) System at 1700 K
• Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing
• Evaluation of Acid Diffusibility in a Chemical Amplification Resist Using Acidic Water-Soluble Film
• Work Function Change Measured by Electron Beam Chopping Technique as Applied to Oxygen-Adsorbed W(100) at High Temperature
• Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formatiorn
• Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
• Secondary Defects of As^+ Implanted Silicon Measured by Thermal Wave Technique
• Explosion Hazard of Gaseous Ozone
• Ozone Passivation Technique for Corrosive Gas Distribution System
• Spin-Polarized Scanning Electron Microscope Equipped with a Thumb-Size Spin Detector : Techniques, Instrumentations and Measurement
• Spin-Polarized Scanning Electron Microscope for Analysis of Complicated Magnetic Domain Structures
• Evaluation of Device Charging in Ion Implantation : Ion Beam Process
• Evaluation of Device Charging in Ion Implantation
• Correlation Dimensions of Human-Generated Random Numbers
• Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
• Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
• A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
• A Study on the Potential Structure of the Barrier in Ba_K_xBiO_3/Natural-Barrier/Au Structures
• Superconducting Properties of Y-Ba-Cu-O Thin Films Prepared by RF Magnetron Sputtering with a Grid Electrode
• Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
• Detection and Printability of Shifter Defects in Phase-Shifting Masks : Photolithography
• Pattern Transfer Characteristics of Transparent Phase Shifting Mask : Photolithography
• Detection and Printability of Shifter Defects in Phase-Shifting Masks
• Pattern Transfer Characteristics of Transparent Phase Shifting Mask
• Charge Buildup in Magnetized Process Plasma
• Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher : Etching and Deposition Technology
• Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer : Resist Material and Process
• A DUV-Defined-Negative Resist/EB-Defined-positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate : Lithography Technology
• A DUV-Defined-Negative Resist/EB-Defined-Positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate
• Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer
• Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher
• Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
• Deposition of Y-Ba-Cu-O Thin Films by RF Magnetron Sputtering with a Grid Electrode: Plasma Parameters
• Molecular Beam Epitaxial Growth and Characterization of the Vertically Aligned InAs Quantum Dots Embedded in Al_Ga_As
• Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al_Ga_As Barriers
• Actively Mode-Locked and Q-Switched Phosphate Glass Oscillator
• Actively Mode-Locked and Q-Switched YAG Laser with Precise Synchronizability
• Molecular Beam Epitaxy of In_xGa_Sb (0≦x≦1)
• Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor
• Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors
• Ion-Sensitive Characteristics of an Electrolyte-Solution-Gate ZnO/ZnMgO Heterojunction Field-Effect Transistor as a Biosensing Transducer
• Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates
• Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates (Special Issue : Microprocesses and Nanotechnology)

もっと見る 閉じる

スポンサーリンク