A DUV-Defined-Negative Resist/EB-Defined-Positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate
スポンサーリンク
概要
- 論文の詳細を見る
We have developed a DUV-defined-negative resist/EB-defined-positive resist two-layer resist system to fabricate T-shaped gates of GaAs MESFET devices. In this resist system, the head of the T-shaped gate is fabricated in the top layer negative resist using a deep-UV exposure and the foot of the T-shaped gate is fabricated in the bottom layer positive resist using an e-beam exposure. Resist profiles are easily controlled because exposures and developments of the top and bottom layers are completely separated. A sub quarter-micron T-shaped gate with the head of the width of more than one micron was successfully fabricated by using this two-layer resist system. This two-layer resist system has wide applicablity for the fabrication of GaAs MESFET devices.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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TODOKORO Yoshihiro
Kyoto Research Lab., Matsushita Electronics Corp.
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WATANABE Hisashi
Kyoto Research Laboratory, Matsushita Electronics Co
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Todokoro Y
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Yoshihiro
Kyoto Research Lab. Matsushita Electronics Corporation
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TAKENAKA Hiroshi
Electronics Research Laboratory, Matsushita Electronics Corp.
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Takenaka Hiroshi
Electronics Research Laboratory Matsushita Electronice Corp.
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