Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-04-01
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Tatsumi Tetsuya
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies (aset)
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MORISHITA Satoshi
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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HAYASHI Hisataka
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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HIKOSAKA Yukinobu
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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NODA Shuichi
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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OKIGAWA Mitsuru
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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INOUE Masami
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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ITABASHI Naoshi
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies(ASET)
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Itabashi N
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Hayashi H
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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