Etch Rate Acceleration of SiO_2 during Wet Treatment after Gate Etching

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Fukuda Seiichi

  Ulsi R & D Laboratories Sony Corporation

• Tatsumi Tetsuya

  Ulsi R & D Laboratories Sony Corporation

• Tatsumi Tetsuya

  Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies (aset)

• KADOMURA Shingo

  ULSI R & D Laboratories, Sony Corporation

• Fukuda Shigekazu

  The Institute Of Physical And Chemical Research (riken)

• Kadomura Shingo

  Ulsi R & D Laboratories Sony Corporation

関連論文

• Radiation Damage of SiO_2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma
• Etch Rate Acceleration of SiO_2 during Wet Treatment after Gate Etching
• Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
• Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
• Determination of the Mass Resolution and the Depth Resolution of Time of Flight Elastic Recoil Detection Analysis Using Heavy Ion Beams
• lmproverment in the Detection Limits of Elastic Recoil Detection Analysis (ERDA)Using a Time-of-Flight Detection
• Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

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