Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
-
Tatsumi Tetsuya
Ulsi R & D Laboratories Sony Corporation
-
Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
-
Inoue M
Osaka Inst. Technol. Osaka Jpn
-
Inoue Mitsuteru
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
-
Inoue M
Setsunan Univ. Osaka Jpn
-
Noda S
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
-
Noda Shoji
Toyota Central Research And Development Labs
-
Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
-
Inoue M
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
-
Inoue M
Kagoshima Univ. Kagoshima Jpn
-
Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
Inoue M
Kyoto Univ. Kyoto Jpn
-
Inoue Masumi
Department Of Quantum Engineering Nagoya University
-
Tatsumi Tetsuya
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies (aset)
-
MORISHITA Satoshi
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
HAYASHI Hisataka
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
HIKOSAKA Yukinobu
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
NODA Shuichi
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
OKIGAWA Mitsuru
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
MATSUI Miyako
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
INOUE Masami
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
SEKINE Makoto
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
-
Noda S
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
-
Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
-
Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
-
INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
-
Noda Shuichi
Association Of Super-advanced Electronics Technologies (aset):(present Address)vlsi R&d Center O
-
Noda Syuichi
Oki Electric Industry Co. Ltd.
-
Hayashi H
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
-
Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
-
Sekine Makoto
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
-
Matsui Miyako
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies (aset)
-
Hikosaka Y
Association Of Super-advanced Electronics Technologies (aset):(present Address)device Development Di
-
Morishita Shunsuke
Association Of Super-advanced Electronics Technologies (aset):(present Address)advanced Technology R
-
Ieda M
Department Of Electrical Engineering Nagoya University
-
Okigawa Mitsuru
Association Of Super-advanced Electronics Technologies (aset):(present Address)system Lsi Division C
-
Ieda M
Department Of Electrical Engineering Nagoya University:(present Address) Department Of Electrical En
-
Sekine Makoto
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Noda Shuichi
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
-
Morishita Satoshi
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
-
Okigawa Mitsuru
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
-
Hayashi Hisataka
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
-
Hikosaka Yukinobu
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
-
Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
-
Inoue Masami
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
関連論文
- Preparation of Y-Ba-Cu-O Thin Films by the CVD Method in a Vacuum-Evaporation-Type Reactor
- 2次元フォトニック結晶レーザの出射ビームの集光特性(フォトニックNWシステム・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)
- フォトニック結晶レーザー : 究極のナノレーザーと大面積コヒーレントレーザー
- Thermally Induced Structural Modification of Nanometer-Order Mo/Si Multilayers by the Spectral Reflectance of Laser-Plasma Soft X-Rays
- Single-Shot Measurement of Spectral Reflectance of a Soft X-Ray Multilayer Mirror Using a Laser-Plasma X-Ray Source
- C-3-82 2次元フォトニック結晶光ナノ共振器のQ値の動的制御(C-3.光エレクトロニクス,一般セッション)
- フォトニック結晶ナノ共振器のQ値の増大と動的制御
- フォトニックバンドギャップを利用した発光制御技術
- フォトニック結晶共振器のQ値の動的制御
- フォトニック結晶共振器のQ値の動的制御(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子光スイッチング,導波路解析,および一般)
- フォトニック結晶共振器のQ値の動的制御(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,および一般)
- New Drive Line Shape for Reflective Magnetooptic Spatial Light Modulator
- Magnetooptic Spatial Light Modulator for Volumetric Digital Recording System
- Magneto-optic spatial light modulator based on magneto-photonic crystal
- One-Dimensional Magnetophotonic Crystal Spatial Light Modulator
- Analysis of Acoustic Streaming in Nematic Liquid-Crystal Cell
- Optical Properties of Domain Pattern Induced in Nematic Liquid-Crystal Cell by Elastic Wave Propagation : Optical Properties of Condensed Matter
- Propagation Characteristics of Lamb Wave in Nematic Liquid-Crystal Cell
- Influence of Liquid-Crystal Directors in an Electric Field on Elastic Wave Propagating in Liquid-Crystal Cell
- Viscosity Measurement of Nematic Liquid Crystal Using Shear Horizontal Wave Propagation in Liquid Crystal Cell
- Viscosity Measurement of Ferroelectric Liquid Crystal Using Shear Horizontal Wave Propagation in a Trilayer Structure
- Periodic Property of Domain in Nematic Liquid Crystal Induced by Elastic Wave
- Liquid Viscosity Measurement Using Plate Mode Shear Horizontal Waves on a Piezoelectric Ceramic Thin Plate
- Radiation Damage of SiO_2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma
- Etch Rate Acceleration of SiO_2 during Wet Treatment after Gate Etching
- Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
- Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
- Fabrication of InAs Single-Crystal Free-Standing Wires for the Study of Electron and Thermal Transport
- Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching
- Monte Carlo Simulation for Auger Depth Profiling of GaAs/AlAs Superlattice Structure by Ar^+ Ion Sputtering
- Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O^+_2 and Ar^+ Ion Sputtering
- Molecular Beam Epitaxial Growth of Al-doped ZnMgO Alloy Films for Modulation-doped ZnO/ZnMgO Heterostructures
- Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn_Mg_O Heterointerface
- Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
- A New Concept of Isotope Separation Using Ion Cyclotron Resonance in a Magnetic Field Having a Radial Component
- Beam-Profile Control Using an Octupole Magnet
- Internal Stress of CoSi_2 Films Formed by Rapid Thermal Annealing
- Stress Measurements in Silicon Substrates with TiSi_2 Patterns Using Raman Microprobe
- Diminution of Micro-Eddy-Current Losses in Magneto-Surface-Acoustic-Wave Propagation Utilizing Multilayered Magnetostrictive Film Separated by Insulating Layers : SAW and Communication Devices
- BGS-type Magneto-Surface-Acoustic-Wave Devices Utilizing Horizontally Polarized PZT-Substrates : SAW and Communication Devices
- Effect of Eddy Current Loss on the Propagation Properties of Magneto-Surface-Acoustic-Waves in Highly Magnetostrictive Alloy Film Deposited on Glass Substrate : SAW and Communication Devices
- Magnetoelastic Wave Excitation Properties of Amorphous Iron-Boron Films Prepared by RF-High Rate Sputtering
- Model Test of Biperiodic L-support Disk-and-Washer Linac Structure
- Measurements of Reflection Coefficient of Ion Waves in an Ion Beam-Plasma System
- Waveform of Linear Ion-Acoustic Waves Excited by a Mesh Grid
- Reflection of Ion Waves from a Bipolar Electrode in an Ion Beam-Plasma System
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Phase-Sensitive Optical Probe for Surface Acoustic Wave Soliton Investigation
- Experimental Studies on Nonlinear Dispersive Surface Acoustic Waves for Solitons
- Reconstruction of Three-Dimensional Images of Surface Acoustic Waves by Means of Computer-Controlled Laser Probe
- Interface-Treated Josephson Junctions in Trilayer Structures
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
- Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- CF and CF_2 Radical Densities in 13.56-MHz CHF_3/Ar Inductively Coupled Plasma(Nuclear Science, Plasmas, and Electric Discharges)
- Planarization of the Yba_2Cu_3O_ Base Electrodes in Trilayer Josephson Junctions : Superconductors
- Lamb Wave Propagation Characteristics and Transducer Performances in Layered Substrate Composed of Piezoelectric Thin Plate and Glass Thin Plate
- Characteristics of Self-Assembled InSb Dots Grown on (100) AlGaSb by Molecular Beam Epitaxy
- Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma
- Analysis of Overlay Accuracy in 0.14μm Device Fabrication using Synchrotron Radiation Lithography
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
- Surface Structure of Zr-O/W(100) System at 1700 K
- Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing
- Evaluation of Acid Diffusibility in a Chemical Amplification Resist Using Acidic Water-Soluble Film
- Work Function Change Measured by Electron Beam Chopping Technique as Applied to Oxygen-Adsorbed W(100) at High Temperature
- Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formatiorn
- Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
- Secondary Defects of As^+ Implanted Silicon Measured by Thermal Wave Technique
- Evaluation of Device Charging in Ion Implantation : Ion Beam Process
- Evaluation of Device Charging in Ion Implantation
- Improvement in Radiation Stability of SiN X-Ray Mask Membranes
- Correlation Dimensions of Human-Generated Random Numbers
- A Study on the Potential Structure of the Barrier in Ba_K_xBiO_3/Natural-Barrier/Au Structures
- Superconducting Properties of Y-Ba-Cu-O Thin Films Prepared by RF Magnetron Sputtering with a Grid Electrode
- Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
- Detection and Printability of Shifter Defects in Phase-Shifting Masks : Photolithography
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask : Photolithography
- Detection and Printability of Shifter Defects in Phase-Shifting Masks
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask
- Charge Buildup in Magnetized Process Plasma
- Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher : Etching and Deposition Technology
- Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer : Resist Material and Process
- A DUV-Defined-Negative Resist/EB-Defined-positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate : Lithography Technology
- A DUV-Defined-Negative Resist/EB-Defined-Positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate
- Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer
- Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher
- Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
- A ^7Li-NMR Study on Spinel LiMn_2O_4 : the Evidence of an Aniferromanetic Transition at 〜40K
- Observation of Polymer Alloy by Spectral Soft X-Ray Microscopy with Laser Plasma X-Ray Source
- Lattice Location of ^N Atoms in SiC Analyzed by Nuclear Resonant Reaction
- Laser Plasma Soft X-Ray Contact Microscopy of Polyrmer Composites
- Structure Analysis of Nylon6-Clay Hybrid by Spectral Reflectance of Laser-Plasma Soft X-Rays
- Deposition of Y-Ba-Cu-O Thin Films by RF Magnetron Sputtering with a Grid Electrode: Plasma Parameters
- Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
- Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma