Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
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概要
- 論文の詳細を見る
One drawback of phase-shifting lithography lies in the high printability of shifter defects. A transparent object on masks (shifter defects) produces lead or lag of the optical phase, which causes an unique printability with respect to focus level. We investigated the printability of shifter defects on phase-shifting masks in out-of-focus conditions. Two types of shifter defects related to the phase angle were investigated: (a) a phase error which is a shifter layer having an incorrect thickness and (b) a phase angle defect which is a defect having a phase angle other than 180°. Phase error causes asymmetrical pattern profiles. It was found that the illumination coherence factor (σ) has a strong influence on the allowance of the shifter thickness (phase error). The effect of phase angle defects located in a large clear area and in small features was investigated. The phase angle defects have an optimum focal plane other than the best focal plane. A defect with a low phase shift located in fine patterns has high printability. In order to establish a mask fabrication process for production-worthy phase-shifting masks, further investigation in the detection of low phase angle shifter defects is necessary.
- 社団法人応用物理学会の論文
- 1992-12-30
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue M
Setsunan Univ. Osaka Jpn
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue M
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Kyoto Univ. Kyoto Jpn
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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TODOKORO Yoshihiro
Kyoto Research Lab., Matsushita Electronics Corp.
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WATANABE Hisashi
Kyoto Research Laboratory, Matsushita Electronics Co
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Sugiura Emiko
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Y
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Yoshihiro
Kyoto Research Lab. Matsushita Electronics Corporation
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IMORIYA Tadashi
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Imoriya Tadashi
Kyoto Research Laboratory Matsushita Electronics Corporation
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