Charge Buildup in Magnetized Process Plasma
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概要
- 論文の詳細を見る
The charge buildup in a magnetron etcher has been studied experimentally for two different magnet arrangements and theoretically on the basis of an equivalent circuit model. Wafer charging measured with a metal-Si_3N_4-SiO_2-Si (MNOS) capacitor is negative along the centerline of the magnet poles and positive between the magnets in both cases. Wafer charging is explained either by curtent crowding at the center of the magnet poles or by the nonambipolar diffusion effect.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Okada H
Univ. Toyama Toyama Jpn
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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OKADA Hiroyuki
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Okada H
Faculty Of Engineering University Of Toyama
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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NAMURA Takashi
Kyoto Research Lab., Matsushita Electronics Corp.
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TODOKORO Yoshihiro
Kyoto Research Lab., Matsushita Electronics Corp.
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Namura T
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Y
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Yoshihiro
Kyoto Research Lab. Matsushita Electronics Corporation
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NAITOH Yasushi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Naitoh Yasushi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Okada Hiroyuki
Kyoto Research Laboratory Matsushita Electronics Corporation
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