Layer-by-Layer Oxidation of Si(001) Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
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KAWAMURA Takaaki
Department of Mathematics and Physics, University of Yamanashi
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Fujita K
Oki Electric Industry Co. Ltd. Tokyo
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Fujita K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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WATANABE Heiji
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Ishida M
Sii Nanotechnology Inc.
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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WATANABE Hajime
ULSI Laboratory, Mitsubishi Electric Corporation
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Fujita K
Univ. Tokyo Tokyo Jpn
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Watanabe H
Advanced Technology R&d Center Mitsubishi Electric Corporation
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FUJITA Ken
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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IWASA Masayuki
SII Nanotechnology Inc.
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Kawamura Takaaki
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takaaki
Department Of Physics Yamanashi University
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Watanabe Heiji
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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Iwasa Masayuki
Sii Nanotechnology Inc. Tokyo Jpn
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