Properties of Photosensor with Amorphous Si:H/SiO_x:H Double-Layer Structure
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概要
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A new amorphous silicon photosensor with glass/Cr/a-Si:H/a-SiO_x:H/ITO structure was prepared. Initially, the photoresponse of this structure to a light pulse is about 750 times slower than that of the photosensor with the inverse (glass/ITO/a-SiO_xH/a-Si:H/Cr) structure. The X-ray photoemission spectra show that the a-SiO_x:H surface is additionally oxidized during deposition of the ITO electrode. A fast response with a rise time of less than 1 ms can be obtained by treating the a-SiO_x:H surface with boron plasma or depositing the boron-doped a-SiO_x:H layer onto the undoped a-SiO_x:H layer before the ITO deposition.
- 1992-03-15
著者
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Kumano Masafumi
Ricoh Research Institute Of General Electronics
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Adachi K
Central Res. Inst. Electric Power Ind. Kanagawa Jpn
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Watanabe Hideo
Sendai Radio Technical College
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HAGA Koichi
RICOH Research Institute of General Electronics
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MURAKAMI Akishige
RICOH Research Institute of General Electronics
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ADACHI Kazuhiko
RICOH Research Institute of General Electronics
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Haga K
Sumitomo Electric Industries Ltd. Yokohama
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Watanabe Hideo
Sendai National College Of Technology
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