Plasma-Enhanced Deposition of Silicon Nitride from SiH_4-N_2 Mixture

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概要

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• Excellent silicon nitride films which can be used as the gate insulator of an a-Si FET are fabricated by RF glow-discharge of SiH_4-N_2-H_2 gas mixtures. Resistivity of larger than 1×10^<16>Ω・cm and breakdown strength of 6×10^6 V/cm are realized. The optimum deposition conditions are evaluated and briefly discussed in connection with mechanisms of the plasmaenhanced deposition.

• 社団法人応用物理学会の論文
• 1983-05-20

著者

• Katoh Kazuhisa

  Research & Development Lab. Stanley Electric Co. Ltd.

• Watanabe Hideo

  Sendai Radio Technical College

• Yasui Masaru

  Research & Development Lab., Stanley Electric Co. LTD.

• Yasui Masaru

  Research & Development Lab. Stanley Electric Co. Ltd.

• Watanabe Hideo

  Sendai National College Of Technology

関連論文

• Effects of rf Power and Substrate Temperature on Properties of a-SiN_x:H Films Prepared by Glow-Discharge of SiH_4-N_2-H_2
• Plasma-Enhanced Deposition of Silicon Nitride from SiH_4-N_2 Mixture
• Properties of Amorphous Films Prepared from SiH_4-N_2-H_2 Gas Mixture
• Properties of Photosensor with Amorphous Si:H/SiO_x:H Double-Layer Structure
• Properties of Silicon-Oxygen Alloy Films Prepared from SiH_4+CO_2 Gas Mixture
• A New Type of Heterojunction a-Si Photodiode for Lensless Contact-Type Image Sensor
• Analysis of Composition of a-Si_Ge_x Alloy Films
• Optical Properties of Plasma-Deposited Silicon-Oxygen Alloy Films

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