Effects of rf Power and Substrate Temperature on Properties of a-SiN_x:H Films Prepared by Glow-Discharge of SiH_4-N_2-H_2

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概要

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• Amorphous SiN_x:H films were prepared by the rf glow-discharge of gaseous mixtures of SiH_4-N_2-H_2 at various substrate temperatures and rf power densities. The nitrogen and hydrogen contents of the films were determined from the intensities of the IR absorption due to vibrations of Si-N bonds and Si-H bonds. The effects of these deposition parameters on the properties of the amorphous films are discussed on the basis of the variation of the composition and structure of the films.

• 社団法人応用物理学会の論文
• 1984-01-20

著者

• Katoh Kazuhisa

  Research & Development Lab. Stanley Electric Co. Ltd.

• Watanabe Hideo

  Sendai Radio Technical College

• Yasui Masaru

  Research & Development Lab., Stanley Electric Co. LTD.

• Watanabe Hideo

  Sendai National College Of Technology

• YASUI Masaru

  Research & Development Lab., Stanley Electric Co. Ltd.

関連論文

• Effects of rf Power and Substrate Temperature on Properties of a-SiN_x:H Films Prepared by Glow-Discharge of SiH_4-N_2-H_2
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