A New Type of Heterojunction a-Si Photodiode for Lensless Contact-Type Image Sensor
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概要
- 論文の詳細を見る
Using boron-doped and nondoped a-SiO_x:H layers as photoreception windows, an ITO/a-SiO_x (B):H/a-SiO_x:H/a-Si:H/Cr heterojunction photodiode is constructed. The collection efficiency for photocarriers is improved over the wavelength range of visible light by this structure. The photo/dark current ratio of 5×10^3 is obtained at an applied voltage of -5 V. The photocurrent retains over 80% of its initial value over 2×10^4 seconds under the irradiation of AM1. With this photodiode, a lensless contact-type image sensor is realized with 8 bits/mm, A4 size and 2.5 ms/line.
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Kumano Masafumi
Ricoh Research Institute Of General Electronics
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Yamamoto K
Kaneka Corporation
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Watanabe Hideo
Sendai Radio Technical College
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HAGA Koichi
RICOH Research Institute of General Electronics
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MURAKAMI Akishige
RICOH Research Institute of General Electronics
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Haga K
Sumitomo Electric Industries Ltd. Yokohama
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YAMAMOTO Kenji
RICOH Research Institute of General Electronics
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SHINDOH Yasuyuki
RICOH Research Institute of General Electronics
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Watanabe Hideo
Sendai National College Of Technology
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