Wide Optical-Gap a-Si:O:H Films Prepared from SiH_4-CO_2 Gas Mixture
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon oxygen alloy films (a-Si:O:H) with wide optical-gap have been prepared by rf glow discharge decomposition of CO_2 and SiH_4 gas mixture. The optical-gap increases monotonically from 1.76 eV to 2.43 eV with increasing molar fraction of CO_2 to SiH_4 in the gas phase. A high photoconductivity of 4.1×10^<-9>(Ω・cm)^<-1> is obtained for the films with the optical-gap of 2.43 eV. Efficient doping is possible in these films and these properties suggest that the films are useful as window materials of photodetectors.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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Kumano Masafumi
Ricoh Research Institute Of General Electronics
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Yamamoto K
Kaneka Corporation
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HAGA Koichi
RICOH Research Institute of General Electronics
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Haga K
Sumitomo Electric Industries Ltd. Yokohama
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YAMAMOTO Kenji
RICOH Research Institute of General Electronics
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WATANABE Hideo
RICOH Research Institute of General Electronics
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