Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-30
著者
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Yamamoto K
Kaneka Corporation
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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GOTO Masakazu
Institute of Applied Physics, University of Tsukuba
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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