Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• Kim Woo

  Semiconductor Leading Edge Technologies Inc.

• Kim W

  Pohang Univ. Sci. And Technol. Pohang Kor

• Muto Akiyoshi

  Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)

• Muto Akiyoshi

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• TORII Kazuyoshi

  Semiconductor Leading Edge Technologies, Inc.

• MAEDA Takeshi

  Semiconductor Leading Edge Technologies, Inc.

• HORIUCHI Atsushi

  Semiconductor Leading Edge Technologies, Inc.

• KAWAHARA Takaaki

  Semiconductor Leading Edge Technologies, Inc.

• MUTO Akiyoshi

  Semiconductor Leading Edge Technologies, Inc.

• KITAJIMA Hiroshi

  Semiconductor Leading Edge Technologies, Inc.

• MITSUHASHI Riichirou

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• ITOH Hiroyuki

  Semiconductor Leading Edge Technologies, Inc.

• Torii Kazuyoshi

  Semiconductor Leading Edge Technologies Inc.

• Horiuchi A

  The Third Department Of Internal Medicine Kinki University School Of Medicine

• Horiuchi Atsushi

  Semiconductor Leading Edge Technologies Inc.

• Kitajima H

  Semiconductor Leading Edge Technologies Inc.

• Mitsuhashi Riichirou

  Semiconductor Leading Edge Technologies Inc.

• Muto Akiyoshi

  Semiconductor Leading Edge Technologies Inc.

• Maeda Takeshi

  Semiconductor Leading Edge Technologies Inc.

• Kawahara Takaaki

  Semiconductor Leading Edge Technologies Inc.

• Kitajima Hiroshi

  Semiconductor Leading Edge Technologies Inc.

• Itoh Hiroyuki

  Semiconductor Leading Edge Technologies Inc.

• HORIUCHI Atsushi

  Semiconductor Leading Edge Technologies

• Kitajima Hiroshi

  Semiconductor Leading Edge Technologies

• KAWAHARA Takaaki

  Semiconductor Leading Edge Technologies

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