Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
スポンサーリンク
概要
- 論文の詳細を見る
We investigated HfO2 etching characteristics in conventional Si gate etching chemistries, namely, CF4 and Cl2/HBr/O2-based chemistries. We obtained an adequate etch rate of 2.0 nm/min for both chemistries and a selectivity of 1.9 over SiO2 for Cl2/HBr/O2-based chemistry. We examined the etch rate dependence on source power, bias power, O2 flow rate, and Cl2 flow rate in the Cl2/HBr/O2 chemistry. It was clarified that a physical component is dominant in HfO2 etching in this chemistry. The possibilities of achieving a higher HfO2/SiO2 selectivity and of controlling the anisotropic/isotropic component in HfO2 patterning were also discussed. Moreover, it was clarified that the surface portion of the damaged layer created by the dry-etching step can be removed by a subsequent wet etching. Based on these results, the sub-100 nm patterning of poly-Si/HfO2 gate stacks was successfully demonstrated.
- 2004-04-15
著者
-
Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
-
ITO Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
-
MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
-
Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
-
Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
-
Muto Akiyoshi
Semiconductor Leading Edge Technologies Inc.
-
Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
-
Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
-
Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
-
Kawahara Takaaki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Maeda Takeshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Sasaki Takaoki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Muto Akiyoshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Ito Hiroyuki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
-
Kitajima Hiroshi
Semiconductor Leading Edge Technologies
-
KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
-
MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
関連論文
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- High-resolution RBS analysis of Si-dielectrics interfaces
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Clinical differences between hypoplastic and normocellular or hyperplastic myelodysplastic syndrome
- Comparative effects of three nitrosourea derivatives on cell cycle kinetics
- Flow Microfluorometric Analysis of Cell Kinetics with Antileukemic Drugs
- Differences in Mitogen Response and Suppressor Function of Two Human T Cell Subsets
- 13-cis Retinoic Acid Inhibits Growth of Adult T Cell Leukemia Cells and Causes Apoptosis; Possible New Indication for Retinoid Therapy
- Prognostic significance of bone marrow lymphocyte counts in the nadir phase of acute myelocytic leukemia
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition
- Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Change of serum erythropoietin levels after allogeneic bone marrow transplantation
- Changes in M-CSF activity and CFU-GM- Inhibitory activity in the urine of patient with cyclic chronic myelogenous leukemia
- Effect of Hf Sources, Oxidizing Agents, and NH_3/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
- Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
- Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing