Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition
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概要
- 論文の詳細を見る
- 2004-01-01
著者
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc. (selete)
関連論文
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- High-resolution RBS analysis of Si-dielectrics interfaces
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
- Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries
- Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition
- Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Effect of Hf Sources, Oxidizing Agents, and NH_3/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
- Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
- Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing