TORII Kazuyoshi | Semiconductor Leading Edge Technologies, Inc.
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概要
関連著者
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies, Inc.
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Muto Akiyoshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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Muto Akiyoshi
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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MUTO Akiyoshi
Semiconductor Leading Edge Technologies, Inc.
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MAEDA Takeshi
Semiconductor Leading Edge Technologies, Inc.
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ITO Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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MITSUHASHI Riichirou
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Yamamoto K
Kaneka Corporation
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Kim Woo
Semiconductor Leading Edge Technologies Inc.
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Kim W
Pohang Univ. Sci. And Technol. Pohang Kor
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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YAMADA Keisaku
Waseda Univ.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Yamamoto K
Univ. Of Tsukuba
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OHJI Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Horiuchi A
The Third Department Of Internal Medicine Kinki University School Of Medicine
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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Kitajima H
Semiconductor Leading Edge Technologies Inc.
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Mitsuhashi Riichirou
Semiconductor Leading Edge Technologies Inc.
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
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OHTA Akio
Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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NAKAGAWA Hiroshi
Department of Pediatrics, Sendai City Hospital
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NAKAJIMA Kiyomi
National Institute for Mateirals Science
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Zhao Ming
Department of Oral Pathology, Faculty of Dentistry, Hiroshima University
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SUZUKI Motofumi
Department of Global Agricultural Sciences, Graduate School of Agricultural and Life Sciences
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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Kimura Kenji
Department of Engineering Science, Kyoto University
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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HIGASHI Seiichirou
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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KAWAHARA Takayuki
Semiconductor Leading Edge Technologies, Inc.
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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Kimura Kenji
Dep. Of Micro Engineering Kyoto Univ.
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NAKAJIMA Kaoru
Department of Micro Engineering, Kyoto University
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UEMATSU Masashi
NTT Basic Research Laboratories, NTT Corporation
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KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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MATSUKI Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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KIM Woosik
Semiconductor Leading Edge Technologies, Inc. (Selete)
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ITOH Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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YAMADA Keisaku
National Institute for Material Science
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KONNO Mitsuru
Application Technology Department, Naka Customer Center, Hitachi Science Systems, Ltd.
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Kimura Kenji
Department Of Micro Engineering Kyoto University
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Nakamura Kunio
Department Of Micro Engineering Kyoto University
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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GOTO Masakazu
Institute of Applied Physics, University of Tsukuba
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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Konno Mitsuru
Application Technology Department Naka Customer Center Hitachi Science Systems Ltd.
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Takada Hitoshi
Semiconductor Leading Edge Technologies
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kawahara Takayuki
Semiconductor Leading Edge Technologies Inc.
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HAYASHI Kiyoshi
Semiconductor Leading Edge Technologies, Inc.
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KASAI Naoki
Semiconductor Leading Edge Technologies, Inc.
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Zhao Ming
Department Of Micro Engineering Kyoto University
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Uematsu Masashi
Ntt Basic Research Laboratories
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Kasai Naoki
Device Platforms Laboratories Nec Corporation
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Hayashi Kiyoshi
Renesas
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Suzuki Motofumi
Department Of Micro Engineering Kyoto University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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TAKAHASHI Masashi
Semiconductor Leading Edge Technologies
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Zhao Ming
Department Of Dermatology Epigenetic Research Center Second Xiangya Hospital Central South Universit
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Ohji Hiroshi
Semiconductor Leading Edge Technologies
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Muto Akiyoshi
Semiconductor Leading Edge Technologies Inc.
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc. (selete)
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Uematsu Masashi
Ntt Basic Research Laboratories Ntt Corporation
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Itoh Hiroyuki
Semiconductor Leading Edge Technologies Inc.
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Suzuki Motofumi
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
著作論文
- Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
- High-resolution RBS analysis of Si-dielectrics interfaces
- Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries
- Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Effect of Hf Sources, Oxidizing Agents, and NH_3/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric