Kawahara Takaaki | Semiconductor Leading Edge Technologies Inc.

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概要

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著作論文

Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition
Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric
Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma

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