HORIUCHI Atsushi | Semiconductor Leading Edge Technologies
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概要
関連著者
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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Mitsuhashi Riichirou
Semiconductor Leading Edge Technologies Inc.
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Muto Akiyoshi
Semiconductor Leading Edge Technologies Inc.
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Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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ITO Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies, Inc.
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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Horiuchi A
The Third Department Of Internal Medicine Kinki University School Of Medicine
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Kitajima H
Semiconductor Leading Edge Technologies Inc.
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kim Woo
Semiconductor Leading Edge Technologies Inc.
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Kim W
Pohang Univ. Sci. And Technol. Pohang Kor
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Muto Akiyoshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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Muto Akiyoshi
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MAEDA Takeshi
Semiconductor Leading Edge Technologies, Inc.
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MUTO Akiyoshi
Semiconductor Leading Edge Technologies, Inc.
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OHJI Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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MITSUHASHI Riichirou
Semiconductor Leading Edge Technologies, Inc. (Selete)
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ITOH Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Goto Masakazu
Institute Of Applied Physics University Of Tsukuba
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Takada Hitoshi
Semiconductor Leading Edge Technologies
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TAKAHASHI Masashi
Semiconductor Leading Edge Technologies
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Ohji Hiroshi
Semiconductor Leading Edge Technologies
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Itoh Hiroyuki
Semiconductor Leading Edge Technologies Inc.
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Yamada Keisaku
Nanomaterials Lab., National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
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Kawahara Takaaki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kawahara Takaaki
Semiconductor Leading Edge Technologies, Inc. (Selete) 34, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Higuchi Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Maeda Takeshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ohdaira Toshiyuki
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Mitsuhashi Riichirou
Semiconductor Leading Edge Technologies, Inc. (Selete) 34, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Muto Akiyoshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Muto Akiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete) 34, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete) 34, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete) 34, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ito Hiroyuki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
著作論文
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
- Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition