ARIKADO Tsunetoshi | Semiconductor Leading Edge Technologies Inc.
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概要
関連著者
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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YASUHIRA Mitsuo
Semiconductor Leading Edge Technologies Inc.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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HOSHI Takeshi
Semiconductor Leading Edge Technologies Inc.
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OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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Yamamoto K
Kaneka Corporation
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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MIYAGAWA Kazuhiro
Semiconductor Leading Edge Technologies Inc.
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WATANABE Yasuhiko
Semiconductor Leading Edge Technologies Inc.
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OZAKI Hiroji
Semiconductor Leading Edge Technologies Inc.
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TOMIKAWA Mitsuhiro
Semiconductor Leading Edge Technologies Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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NAKAJIMA Kiyomi
National Institute for Mateirals Science
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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YAMADA Keisaku
Waseda Univ.
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MATSUKI Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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MAEDA Takeshi
Semiconductor Leading Edge Technologies, Inc.
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies, Inc.
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Yamamoto K
Univ. Of Tsukuba
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YOSHIDA Shiniti
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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YAMADA Keisaku
National Institute for Material Science
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KONNO Mitsuru
Application Technology Department, Naka Customer Center, Hitachi Science Systems, Ltd.
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Yasutake Kiyoshi
Osaka Univ. Osaka Jpn
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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GOTO Masakazu
Institute of Applied Physics, University of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Konno Mitsuru
Application Technology Department Naka Customer Center Hitachi Science Systems Ltd.
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Goto Masakazu
Institute Of Applied Physics University Of Tsukuba
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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ARIKADO Tsunetoshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
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Mineji Akira
Research Dept. 1 Semiconductor Leading Edge Technologies Inc.
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HAYASHI Kiyoshi
Semiconductor Leading Edge Technologies, Inc.
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KASAI Naoki
Semiconductor Leading Edge Technologies, Inc.
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Kasai Naoki
Device Platforms Laboratories Nec Corporation
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Hayashi Kiyoshi
Renesas
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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YAMASHITA Koji
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
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OOTSUKA Fumio
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
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YASUHIRA Mitsuo
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Arikado Tsunetoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Yamashita Koji
Research Dept. 1 Semiconductor Leading Edge Technologies Inc.
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Yamada Keisaku
Nanomaterials Lab., National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 120-5-308 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan
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Chikyow Toyohiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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YAMASHITA KOJI
Research and Technology Development Division, HSP company
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Umezawa Naoto
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Higuchi Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hoshi Takeshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohdaira Toshiyuki
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tomikawa Mitsuhiro
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Yasuhira Mitsuo
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ozaki Hiroji
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
著作論文
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths