Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
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概要
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We studied effects of nitrogen incorporation into Hf-based high-$k$ gate dielectrics on local insulating properties by conductive atomic force microscopy. Nitrogen-incorporated HfSiO/HfO2/SiO2 gate stacks exhibited excellent dielectric reliability, whereas we observed the creation of local leakage sites for untreated gate stacks, i.e., without nitridation. Both types of high-$k$ dielectric layers were crystallized, and there was no relationship between the current leakage sites and surface morphology. These findings indicate that grain boundaries of the high-$k$ films do not act as the leakage sites. Instead, we propose nitrogen incorporation as an important method for terminating the current leakage paths and discuss detailed mechanisms based on first-principles calculations.
- 2005-10-10
著者
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 120-5-308 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan
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Chikyow Toyohiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Umezawa Naoto
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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